march 2012 ?2012 fairchild semiconductor corporation FDMS86300DC rev. c1 www.fairchildsemi.com 1 FDMS86300DC n-channel dual cool tm power trench ? mosfet FDMS86300DC n-channel dual cool tm power trench ? mosfet 80 v, 60 a, 3.1 m features ? dual cool tm top side cooling pqfn package ? max r ds(on) = 3.1 m at v gs = 10 v, i d = 24 a ? max r ds(on) = 4.0 m at v gs = 8 v, i d = 21 a ? high performance technology for extremely low r ds(on) ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process. advancements in both silicon and dual cool tm package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance by extremely low junction-to-ambient thermal resistance. applications ? synchronous rectifier for dc/dc converters ? telecom secondary side rectification ? high end server/workstation vcore low side bottom top pin 1 s g s s d d d d power 56 s pin 1 d d d d s s s g mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 80 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25 c 60 a -continuous (silicon limited) t c = 25 c 148 -continuous t a = 25 c (note 1a) 24 -pulsed 150 e as single pulse avalanche energy (note 3) 240 mj p d power dissipation t c = 25 c 125 w power dissipation t a = 25 c (note 1a) 3.2 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (top source) 2.3 c/w r jc thermal resistance, junction to case (bottom drain) 1.0 r ja thermal resistance, junction to ambient (note 1a) 38 r ja thermal resistance, junction to ambient (note 1b) 81 r ja thermal resistance, junction to ambient (note 1i) 16 r ja thermal resistance, junction to ambient (note 1j) 23 r ja thermal resistance, junction to ambient (note 1k) 11 device marking device package reel size tape width quantity 86300 FDMS86300DC dual cool tm power 56 13?? 12 mm 3000 units
FDMS86300DC n-channel dual cool tm power trench ? mosfet www.fairchildsemi.com 2 ?2012 fairchild semiconductor corporation FDMS86300DC rev. c1 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 80 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 45 mv/c i dss zero gate voltage drain current v ds = 64 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a2.53.34.5v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -11 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 24 a 2.6 3.1 m v gs = 8 v, i d = 21 a 3.1 4.0 v gs = 10 v, i d = 24 a, t j = 125 c 4.1 5.0 g fs forward transconductance v dd = 10 v, i d = 24 a 79 s c iss input capacitance v ds = 40 v, v gs = 0 v, f = 1 mhz 5265 7005 pf c oss output capacitance 929 1235 pf c rss reverse transfer capacitance 21 50 pf r g gate resistance 1.2 t d(on) turn-on delay time v dd = 40 v , i d = 24 a, v gs = 10 v, r gen = 6 29 47 ns t r rise time 25 44 ns t d(off) turn-off delay time 35 57 ns t f fall time 918ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 40 v i d = 24 a 72 101 nc total gate charge v gs = 0 v to 8 v 59 84 nc q gs total gate charge 26 nc q gd gate to drain ?miller? charge 14 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.7 a (note 2) 0.72 1.2 v v gs = 0 v, i s = 24 a (note 2) 0.80 1.3 t rr reverse recovery time i f = 24 a, di/dt = 100 a/ s 56 88 ns q rr reverse recovery charge 42 67 nc
FDMS86300DC n-channel dual cool tm power trench ? mosfet www.fairchildsemi.com 3 ?2012 fairchild semiconductor corporation FDMS86300DC rev. c1 thermal characteristics r jc thermal resistance, junction to case (top source) 2.3 c/w r jc thermal resistance, junction to case (bottom drain) 1.0 r ja thermal resistance, junction to ambient (note 1a) 38 r ja thermal resistance, junction to ambient (note 1b) 81 r ja thermal resistance, junction to ambient (note 1c) 27 r ja thermal resistance, junction to ambient (note 1d) 34 r ja thermal resistance, junction to ambient (note 1e) 16 r ja thermal resistance, junction to ambient (note 1f) 19 r ja thermal resistance, junction to ambient (note 1g) 26 r ja thermal resistance, junction to ambient (note 1h) 61 r ja thermal resistance, junction to ambient (note 1i) 16 r ja thermal resistance, junction to ambient (note 1j) 23 r ja thermal resistance, junction to ambient (note 1k) 11 r ja thermal resistance, junction to ambient (note 1l) 13 notes: 1. r ja is determined with the device mounted on a fr-4 board using a specified pad of 2 oz copper as shown below. r jc is guaranteed by design while r ca is determined by the user's board design. c. still air, 20.9x10.4x12.7mm aluminum heat sink, 1 in 2 pad of 2 oz copper d. still air, 20.9x10.4x12.7mm aluminum heat sink, minimum pad of 2 oz copper e. still air, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, 1 in 2 pad of 2 oz copper f. still air, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, minimum pad of 2 oz copper g. 200fpm airflow, no heat sink,1 in 2 pad of 2 oz copper h. 200fpm airflow, no heat sink, minimum pad of 2 oz copper i. 200fpm airflow, 20.9x10.4x12.7mm aluminum heat sink, 1 in 2 pad of 2 oz copper j. 200fpm airflow, 20.9x10.4x12.7mm aluminum heat sink, minimum pad of 2 oz copper k. 200fpm airflow, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, 1 in 2 pad of 2 oz copper l. 200fpm airflow, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, minimum pad of 2 oz copper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 o c, l = 0.3 mh, i as = 40 a, v dd = 72 v, v gs = 10 v. a. 38 c/w when mounted on a 1 in 2 pad of 2 oz copper b. 81 c/w when mounted on a minimum pad of 2 oz copper g df ds sf ss g df ds sf ss
FDMS86300DC n-channel dual cool tm power trench ? mosfet www.fairchildsemi.com 4 ?2012 fairchild semiconductor corporation FDMS86300DC rev. c1 typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 30 60 90 120 150 v gs = 7 v v gs = 6 v v gs = 10 v v gs = 6.5 v v gs = 8 v v gs = 5.5 v pulse duration = 80 p s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0306090120150 0 1 2 3 4 5 6 v gs = 7 v v gs = 8 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 5.5 v v gs = 6 v v gs = 6.5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 24 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 5678910 0 3 6 9 12 15 t j = 125 o c i d = 24 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 34567 0 30 60 90 120 150 t j = 25 o c t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS86300DC n-channel dual cool tm power trench ? mosfet www.fairchildsemi.com 5 ?2012 fairchild semiconductor corporation FDMS86300DC rev. c1 figure 7. 0 20406080 0 2 4 6 8 10 i d = 24 a v dd = 40 v v dd = 30 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 50 v gate charge characteristics figure 8. 0.1 1 10 80 5 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 500 1 10 100 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 30 60 90 120 150 limited by package v gs = 8 v r t jc = 1.0 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature figure 11. 0.01 0.1 1 10 100 400 0.01 0.1 1 10 100 200 10 s 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 81 o c/w t a = 25 o c fo rw ard bi as safe operating area f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m po wer dissipation 10 -3 10 -2 10 -1 110 100 1000 1 10 100 1000 2000 single pulse r t ja = 81 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
FDMS86300DC n-channel dual cool tm power trench ? mosfet www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation FDMS86300DC rev. c1 figure 13. junction-to-ambient transient thermal response curve 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 81 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMS86300DC n-channel dual cool tm power trench ? mosfet www.fairchildsemi.com 7 ?2012 fairchild semiconductor corporation FDMS86300DC rev. c1 dimensional outlin e and pad layout
8 www.fairchildsemi.com FDMS86300DC n-channel dual cool tm power trench ? mosfet ?2012 fairchild semiconductor corporation FDMS86300DC rev. c1 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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